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Tomomi Yoshimoto

    Department of Electrical and Electronic Engineering　Professor
    Research Institute of Industrial Technology　Researcher
    Course of Electricity， Electronics and Communications　Professor
Last Updated :2025/04/19

Researcher Information

Degree

  • master
  • doctor

Research funding number

  • 60230819

J-Global ID

Research Interests

  • field emission   電子デバイス   electron device   

Research Areas

  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment
  • Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering

Education

  •        - 1990/03  Tokai University  Graduate School of Engineering  電子工学専攻
  •        - 1990/03  TOKAI UNIVERSITY  Graduate School, Division of Engineering
  •        - 1988/03  Tokai University  School of Engineering  電子工学科
  •        - 1988/03  TOKAI UNIVERSITY  Faculty of Engineering

Association Memberships

  • 日本表面真空学会   電子情報通信学会   応用物理学会   

Published Papers

  • Field Emission from Sharp Protrusions of Graphite Fabricated by Sandblasting Process
    T. Yoshimoto; T. Ebina; T. Iwata
    JAPANESE JOURNAL OF APPLIED PHYSICS 62 078001-1 - 078001-3 2023/07 [Refereed]
  • カーボンペーパーからの低電界における電子放射
    吉本 智巳,仲野 羅武,岩田 達夫
    電子情報通信学会論文雑誌C Vol.J105-C (No.2) 78 - 90 2022/02 [Refereed]
  • Change of field emission characteristic of sandblasted Si surface by Size of Sandblasting Fine Particles
    T. Yoshimoto; T. Iwata
    電子情報通信学会論文誌C J103-C (12) 496 - 498 2020/12 [Refereed]
  • Field-Emission from Finely Nicked Structures on n-Type Silicon Substrate Formed by Sandblasting Process
    T. Yoshimoto; T. Iwata
    EICE TRANS. ELECTRON E102-C (No.2) 207 - 210 2019/02 [Refereed]
  • ダイヤモンド微粒子からの電界放射電流の時間変化
    吉本 智巳; 岩田 達夫
    電子情報通信学会 J100C (No.1) 41 - 44 2017/01 [Refereed]
  • Tomomi Yoshimoto; Yoshiaki Sugimoto; Tatsuo Iwata
    IEICE TRANSACTIONS ON ELECTRONICS IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG E98C (10) 995 - 998 1745-1353 2015/10 [Refereed]
  • オクタンチオールを用いた個液界面接触分解法で堆積したアモルファスカーボン薄膜からの熱電子放射
    吉本 智巳; 土屋 拓磨; 岩田 達夫; 蒲生西谷美香
    電子情報通信学会 J98-C (No.10) 220 - 222 2015/10 [Refereed]
  • Tomomi Yoshimoto; Tatsuo Iwata
    IEICE TRANSACTIONS ON ELECTRONICS IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG E98C (4) 371 - 376 1745-1353 2015/04 [Refereed]
  • Tomomi Yoshimoto; Tatsuo Iwata
    IEICE TRANSACTIONS ON ELECTRONICS IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG E96C (1) 132 - 134 0916-8524 2013/01 [Refereed]
  • Tomomi Yoshimoto; Tatsuo Iwata
    IEICE TRANSACTIONS ON ELECTRONICS IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG E94C (12) 1913 - 1916 0916-8524 2011/12 [Refereed]
  • Field Emission from Diamond Micropowders with Sharp Edges
    T. YOSHIMOTO; H. YUI; T. IWATA
    J. Vac. Sci. Technol. (B) 28 (2) C2B30 - C2B33 2010/03 [Refereed]
  • Tomomi Yoshimoto; Kazuki Sato; Tatsuo Iwata
    JAPANESE JOURNAL OF APPLIED PHYSICS JAPAN SOC APPLIED PHYSICS 49 (7) 070212-1 - 0702012-3 0021-4922 2010 [Refereed]
  • IWATA Tatsuo; YOSHIMOTO Tomomi; YOSHIDA Hiroyuki; MORITA Yoshihiro; MIKAMI Sunao; MAYAMA Norihito; OWARI Masanori
    Shinku The Vacuum Society of Japan 52 (No.3) 176 - 178 1882-2398 2009/03 [Refereed]
  • YOSHIMOTO Tomomi; YUI Hisanori; SHOW Yoshiyuki; IWATA Tatsuo
    Shinku The Vacuum Society of Japan 52 (No.3) 150 - 152 1882-2398 2009/03 [Refereed]
  • YOSHIMOTO Tomomi; YOKOGAWA Naohiro; IWATA Tatsuo
    The IEICE transactions on electronics C The Institute of Electronics, Information and Communication Engineers Vol.91-C (No.1) 144 - 147 1345-2827 2008 [Refereed]
  • p型GaAs陰極からの電界放射特性の熱処理による変化
    吉本智巳; 岩田達夫
    電子情報通信学会論文誌C Vol.J89-C (12) 1128 - 1130 2006/12 [Refereed]
  • 炭素系硬質薄膜で被覆された陰極からの電子放射機構
    岩田達夫; 吉本智巳; 安森偉郎; 飯田昌盛
    J. Vac. Soc. Jpn. 49 (12) 771 - 774 2006/12 [Refereed]
  • Field Emission from Silicon Carbide (SiC) Micropowders
    T. YOSHIMOTO; N. YOKOGAWA; T. IWATA
    Jpn.J.Appl.Phys 45 L482 - L484 2006 [Refereed]
  • Field Emission Characteristics from Carbon Nanotube Single Tip Grown on Si Cone
    T. YOSHIMOTO; T. IWATA; K. MATSUMOTO
    Jpn.J.Appl.Phys. 44 6739 - 6741 2005 [Refereed]
  • Field - Emission Characteristics from Carbon Nanotube Field Emitter Arrays (CNT FEAs) Grown on Silicon Emitters
    T. YOSHIMOTO; D. KAMIMARU; H. IWASAKI; T. IWATA; K. MATSUMOTO
    J. Vac. Sci. Technol. (B) 22(3) 1338 - 1341 2004 [Refereed]
  • ウエットエッチング法によって製作したp型GaAs陰極からの電界放射特性
    吉本智巳; 紙丸大; 菊池悟; 横川直博; 岩田達夫
    真空 45 (9) 706 - 709 2002/09 [Refereed]
  • F-Nプロット勾配の連続的検出法の熱脱離スペクトル検出への応用
    岩田達夫; 吉本智巳
    真空 44 (3) 252 - 255 2001/03 [Refereed]
  • Temperature Dependence of Field Emission Characteristics from a p-Type Si Single Emitter with Real Surface
    T. YOSHIMOTO; T. IWATA; S. KIKUCHI; N. YOKOGAWA
    Jpn.J.Appl.Phys. 40 4197 - 4198 2001 [Refereed]
  • Emission Properties from Carbon Nanotube Field Emitter Arrays (FEAs) Grown on Si Emitters
    T. YOSHIMOTO; T. IWATA; R .MINESAWA; K. MTSUMOTO
    Jpn.J.Appl.Phys. 40 (9A/B) L983 - L985 2001 [Refereed]
  • 集束イオンビームプロセスを用いて製作したSiエミッタの電界放射特性
    吉本智巳; 岩田達夫; 末岡和久; 武笠幸一
    真空 43 (8) 817 - 819 2000/08 [Refereed]
  • Si基板上に作製したAu/n-Geショットキーダイオードの電気的特性
    吉本智巳; 坂本邦博; 岩田達夫
    真空 43 (3) 277 - 279 2000/03 [Refereed]
  • Ionized Cluster Beam Deposition of Antimony and Bismuth Films
    J. NAGAO; T. SHIINO; S. KIKUCHI; T. YOSHIMOTO; E. HATTA; K. MUKASA
    J. Phys. D : Appl. Phys 32 134 - 138 1999 [Refereed]
  • SOI Waveguide GeSi Avalanche pin Photodetector at 1.3um Wavelength
    T. YOSHIMOTO; S. G. THOMAS; K. L. WANG; B. JALALI
    IEICE on Electron. E81-C (10) 1667 - 1669 1998 [Refereed]
  • Advances in Silicon-on-Insulator Optoelectronics
    B. JALALI; S. YEGNANARAYANAN; T. YOON; T. YOSHIMOTO; I. RENDINA; F. COPINEER
    IEEE Selected Topics in Quantum Electronics 4 (6) 938 - 947 1998 [Refereed]
  • 集束イオンビームを用いた探針加工の研究
    佐々木泰; 亀井孝明; 吉本智巳; 岩田達夫; 鈴木和郎; 末岡和久; 武笠幸一
    真空 38 (3) 401 - 403 1995/03 [Refereed]
  • Electrical Properties of Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
    T. YOSHIMOTO
    IEICE Trans. Electron. 77-C (1) 63 - 68 1994/01 [Refereed]
  • A High Current Gain Si MIS Tunnel Emitter Transisotr
    T. YOSHIMOTO; K. SUZUKI
    Jpn.J.Appl.Phys. 32 (2A) L180 - L182 1993 [Refereed]
  • Si Metal Insulator Semiconductor Tunnel Emitter Transisto
    T. YOSTOHIMO; K. SAKAMOTO; K. MATSUMOTO; T. SAKATA
    Jpn.J.Appl.Phys. 30 (12A) L2012 - L2014 1991/12 [Refereed]
  • GaAs Inversion-Base Bipolar Transistor (GaAs IBT) Graded Emitter Barrier
    K. MATSUMOTO; Y. HAYASHI; T. NAGATA; T. YOSHIMOTO
    Jpn.J.Appl.Phys. 27 (6) L1154 - L1156 1989/06 [Refereed]
  • Pnp type GaAs Inversion-Base Bipolar Transistor (pnp Type GaAs IBT)
    K. MATSUMOTO; Y. HAYASHI; T. NAGATA; T. YOSHIMOTO; T. KOJIMA
    Jpn.J.Appl.Phys 28 (4) L538 - L540 1989/04 [Refereed]
  • Integration of GaAs SIS FET and GaAs Inversion-Base Bipolar Transistor(GaAs IBT)
    K. MATSUMOTO; Y. HAYASHI; T. NAGATA; TKOJIMA; T. YOSHIMOTO
    Jpn.J.Appl.Phys. 27 (12) L2427 - L2430 1988/12 [Refereed]

Research Grants & Projects

  • ダイヤモンドナノ粒子を用いた高性能電界放射電子源の研究
    基盤研究(C)
    Date (from‐to) : 2010/04 -2012/03 
    Author : 吉本 智巳
  • Japan Society for the Promotion of Science：Grants-in-Aid for Scientific Research
    Date (from‐to) : 2009 -2011 
    Author : HANAJIRI Tatsuro; YOSHIMORO Tomomi; MIZUKI Toru; KASHIWAGI Kunihiro
     
    By combining the electrophoresis method and the conventional Coulter method, we previously proposed the Electrophoretic Coulter Method(ECM)- a technique that enables simultaneous analysis of the size and ζvalues of individual specimens. In this study, we validate ECM in ζmeasurement of biological cells by a conventional Dynamic Light Scattering(DLS) to apply ECM to the field of clinical medicine. We use sheep's red blood cells(RBCs) as biological cells. The ζof RBC is varied by adsorption of Immunogloblin G(IgG) to RBC. We are able to obtain the difference between ζs of RBCs and those of RBCs-IgG by using ECM. In addition, we demonstrate thatζs obtained using ECM show a good agreement with those obtained by the conventional DLS and our ECM can distinguish biological cells using the difference ofζs. Furthermore, we propose that SOI(Silicon On Insulator) wafers or SOQ(Silicon On Quartz) wafers should be utilized as platforms for integration of ECM systems combined with electric detectors or optical detectors and sorting systems, and we characterize fundamental characteristics of SOI wafers and SOQ wafers in detail.
  • カーボンナノチューブ電界放射電子源アレーの製作と電界放射特性の評価
    寿原記念財団：
    Date (from‐to) : 2003/04 -2004/03 
    Author : 吉本 智巳
  • カーボンナノチューブ電界放射電子源の研究
    若手研究(B)
    Date (from‐to) : 2002/04 -2004/03 
    Author : 吉本 智巳
  • 1.55umの波長に高感度を有する導波路型SiGeおよびGe光検出器の研究
    ホクサイテック財団：
    Date (from‐to) : 1998/04 -1999/03 
    Author : 吉本 智巳
  • SiMISトンネル・エミッタ・トランジスタ(SiMISTET)の研究
    奨励研究(A)
    Date (from‐to) : 1994/04 -1995/03 
    Author : 吉本 智巳
  • SiMISトンネル・エミッタ・トランジスタ(SiMISTET)の研究
    奨励研究(A)
    Date (from‐to) : 1993/04 -1994/03 
    Author : 吉本 智巳
  • MBE法によって製作されたGeSi層をチャネルとするMOS FETの研究
    池谷科学技術振興財団：
    Date (from‐to) : 1991/04 -1992/03 
    Author : 吉本 智巳
  • Field Emission from Carbon Nanotube
    Cooperative Research
  • Field Emission From Semiconductor
    Cooperative Research

Other link

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