Tatsuro Hanajiri

Researcher Information

URL

http://quantum.eng.toyo.ac.jp/

J-Global ID

• 200901062135903772

Research Interests

• 半導体デバイス   量子デバイス工学   Nano Electronics   Semiconductor   Single Electron Transisitor (SET)   Silicon On Quartz (SOQ) wafer   Silicon On Insulator (SOI) wafer   MOSFET   抗原抗体反応   電気泳動   電気浸透流   ゼータ電位   赤血球   コールター法   

Research Areas

• Nanotechnology/Materials / Nanobioscience
• Nanotechnology/Materials / Nano/micro-systems
• Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering / Semiconductor, Advanced carbon materials
• Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment / MOSFET, Single electron transisitor (SET)

Academic & Professional Experience

• 2012/04 - Today  Toyo University大学院学際・融合科学研究科研究科長
• 2011/04 - Today  Toyo UniversityFaculty of Science and Engineering教授
• 2007/04 - Today  Toyo Universityバイオ・ナノエレクトロニクス研究センター副センター長（施設、装置担当）
• 2007/04 - 2011/03  Toyo University工学部教授
• 1998/04 - 2007/03  Toyo University工学部助教授
• 1994/04 - 1998/03  Toyo University工学部講師

Education

• 1991/04 - 1994/03  The University of Tokyo  大学院工学系研究科（博士課程）  電子工学専攻
• 1989/04 - 1991/03  The University of Tokyo  大学院工学系研究科（修士課程）  電子工学専攻
• 1985/04 - 1989/03  Waseda University  School of Science and Engineering  電気工学科 エレクトロニクス専修コース

Published Papers

• Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

  Tianzhuo Zhan; Mao Xu; Zhi Cao; Chong Zheng; Hiroki Kurita; Fumio Narita; Yen-Ju Wu; Yibin Xu; Haidong Wang; Mengjie Song; Wei Wang; Yanguang Zhou; Xuqing Liu; Yu Shi; Yu Jia; Sujun Guan; Tatsuro Hanajiri; Toru Maekawa; Akitoshi Okino; Takanobu Watanabe

  Micromachines MDPI AG 14 (11) 2076 - 2076 2023/11 [Refereed]
  
• Spin-charge-coupled transverse resistance in an ambipolar conductor YH₂-based Hall-bar structure with perpendicularly magnetized current-injection electrodes

  Kaname Sato; Yutaro Takahashi; Shujiro Akisato; Ryota Mikami; Nao Suganuma; Yugo Ashizawa; Hayate Kawaguchi; Yoshikata Nakajima; Tomofumi Ukai; Yasuhiko Fuji; Tatsuro Hanajiri; Junya Kaneko; Osamu Nakamura; Pham Van Thach; Hiroyuki Awano; Shigehiko Hasegawa; Masamichi Sakai

  Physica Scripta IOP Publishing 98 (4) 045912 - 045912 0031-8949 2023/03 [Refereed]
  
• Direct Cardiac Epigenetic Reprogramming through Codelivery of 5′Azacytidine and miR-133a Nanoformulation

  PRIYADHARSHNI MUNIYANDI; Vivekanandan Palaninathan; Tatsuro Hanajiri; Toru Maekawa

  International Journal of Molecular Sciences 2022/12 [Refereed]
  
• Biological Synthesis of Bioactive Gold Nanoparticles from Inonotus obliquus for Dual Chemo-Photothermal Effects against Human Brain Cancer Cells

  Ibrohimjon Shukurov; Mohamed Sheikh Mohamed; Toru Mizuki; Vivekanandan Palaninathan; Tomofumi Ukai; Tatsuro Hanajiri; Toru Maekawa

  International Journal of Molecular Sciences MDPI AG 23 (4) 2292 - 2292 2022/02 [Refereed]
  
• Scaffold mediated delivery of dual miRNAs to transdifferentiate cardiac fibroblasts

  Priyadharshni Muniyandi; Vivekanandan Palaninathan; Toru Mizuki; M. Sheikh Mohamed; Tatsuro Hanajiri; Toru Maekawa

  Materials Science and Engineering: C Elsevier BV 128 112323 - 112323 0928-4931 2021/09 [Refereed]
  
• Direct Cardiac Reprogramming with Engineered miRNA Scaffolds

  Priyadharshni Muniyandi; Toru Maekawa; Tatsuro Hanajiri; Vivekanandan Palaninathan

  Current Pharmaceutical Design Bentham Science Publishers Ltd. 26 (34) 4285 - 4303 1381-6128 2020/10 [Refereed]
  
• Effect of thermally annealed atomic-layer-deposited AlOx/chemical tunnel oxide stack layer at the PEDOT:PSS/n-type Si interface to improve its junction quality

  Md Enamul Karim; Yuki Nasuno; Abdul Kuddus; Tomofumi Ukai; Shunji Kurosu; Masahide Tokuda; Yasuhiko Fujii; Tatsuro Hanajiri; Ryo Ishikawa; Keiji Ueno; Hajime Shirai

  JOURNAL OF APPLIED PHYSICS 128 (4) 0021-8979 2020/07 [Refereed]
  
• Synthesis of AlOx thin films by atmospheric-pressure mist chemical vapor deposition for surface passivation and electrical insulator layers

  Arifuzzaman Rajib; Karim Md Enamul; Shunji Kurosu; Tomofumi Ukai; Masahide Tokuda; Yasuhiko Fujii; Tatsuro Hanajiri; Ryo Ishikawa; Keiji Ueno; Hajime Shirai

  Journal of Vacuum Science & Technology A American Vacuum Society 38 (3) 033413 - 033413 0734-2101 2020/05 [Refereed]
  
• Complex switching behavior of magnetostatically coupled single-domain nanomagnets probed by micro-Hall magnetometry

  N. Keswani; Y. Nakajima; N. Chauhan; T. Ukai; H. Chakraborti; K. D. Gupta; T. Hanajiri; S. Kumar; Y. Ohno; H. Ohno; P. Das

  Applied Physics Letters 116 (10) 0003-6951 2020/03 [Refereed]
  
• Poly(lactic-co-glycolic acid)/Polyethylenimine Nanocarriers for Direct Genetic Reprogramming of MicroRNA Targeting Cardiac Fibroblasts

  Priyadharshni Muniyandi; Vivekanandan Palaninathan; Toru Mizuki; Toru Maekawa; Tatsuro Hanajiri; M. Sheikh Mohamed

  ACS Applied Nano Materials American Chemical Society ({ACS}) 3 (3) 2491 - 2505 2020/03 [Refereed]
  
• ECM Mimetic Electrospun Porous Poly (L-lactic acid) (PLLA) Scaffolds as Potential Substrates for Cardiac Tissue Engineering

  Priyadharshni Muniyandi; Vivekanandan Palaninathan; Srivani Veeranarayanan; Tomofumi Ukai; Toru Maekawa; Tatsuro Hanajiri; Mohamed Sheikh Mohamed

  Polymers MDPI AG 12 (2) 451 - 451 2020/02 [Refereed]
  
• Role of the solvent in large crystal grain growth of inorganic-organic halide FA_0.8Cs_0.2PbI_xBr_3 − x perovskite thin films monitored by ellipsometry

  Koki Kawamura; Ryo Ishikawa; Yoko Wasai; Nataliya Nabatova-Gabain; Shun-ji Kurosu; Tomofumi Ukai; Masahide Tokuda; Yasuhiko Fujii; Tatsuro Hanajiri; Keiji Ueno; Hajime Shirai

  Journal of Vacuum Science & Technology B American Vacuum Society 37 (6) 062401 - 062401 2166-2746 2019/11 [Refereed]
  
• Chemical mist deposition of organic for efficient front- and back-PEDOT:PSS/crystalline Si heterojunction solar cells

  A. T.M.Saiful Islam; Md Enamul Karim; Arifuzzaman Rajib; Yuki Nasuno; Tomofumi Ukai; Shunji Kurosu; Masahide Tokuda; Yasuhiko Fujii; Yoshikata Nakajima; Tatsuro Hanajiri; Hajime Shirai

  Applied Physics Letters 114 0003-6951 2019/05 [Refereed]
  
• Low-temperature synthesis of hydride semiconductor YH 3−δ using Pt capped Y films and its chemical thermodynamics analysis

  T. Sakai; M. Sakai; T. Kobayashi; M. Yasutake; S. Akisato; R. Mikami; N. Suganuma; Y. Takahashi; Y. Nakajima; M. Tokuda; Y. Fujii; T. Hanajiri; O. Nakamura

  Thin Solid Films 669 288 - 293 0040-6090 2019/01 [Refereed]
  
• Detection and Analysis of Targeted Biological Cells by Electrophoretic Coulter Method

  Yoshikata Nakajima; Tomofumi Ukai; Toshiaki Shimizu; Kazuhei Ogata; Seiki Iwai; Naohiro Takahashi; Atsushi Aki; Toru Mizuki; Toni Maekawa; Tatsuro Hanajiri

  ANALYTICAL CHEMISTRY 89 (22) 12450 - 12457 0003-2700 2017/11 [Refereed]
  
• Barium hydroxide hole blocking layer for front- and back-organic/crystalline Si heterojunction solar cells

  Jaker Hossain; Koji Kasahara; Daisuke Harada; A. T. M. Saiful Islam; Ryo Ishikawa; Keiji Ueno; Tatsuro Hanajiri; Yoshikata Nakajima; Yasuhiko Fujii; Masahide Tokuda; Hajime Shirai

  JOURNAL OF APPLIED PHYSICS 122 (5) 055010  0021-8979 2017/08 [Refereed]
  
• Chemical mist deposition of PEDOT:PSS and its application to c-Si/PEDOT:PSS solar cells

  Kuroki Takanori; Jiale Dou; Ryoma Ishikawa; Hossain Jaker; Islam A.T.M Saiful; Tatsuro Hanajiri; Yoshikata Nakajima; Yasuhiko Fujii; Masahide Tokuda; Ryo Ishikawa; Hajime Shirai

  JSAP Annual Meetings Extended Abstracts The Japan Society of Applied Physics 2017.1 3668 - 3668 2017/03
• Synthesis of nanoparticles composed of silver and silver chloride for a plasmonic photocatalyst using an extract from needles of Pinus densiflora

  Vemu Anil Kumar; Yoshikata Nakajima; Yoshikata Nakajima; Takashi Uchida; Takashi Uchida; Tatsuro Hanajiri; Tatsuro Hanajiri; Toru Maekawa; Toru Maekawa

  Materials Letters 176 172 - 172 1873-4979 2016/08 [Refereed]
  
• Effect of substrate bias on mist deposition of conjugated polymer on textured crystalline-Si for efficient c-Si/organic heterojunction solar cells

  Tatsuya Ohki; Koki Ichikawa; Jaker Hossain; Yasuhiko Fujii; Tatsuro Hanajiri; Ryo Ishikawa; Keiji Ueno; Hajime Shirai

  Physica Status Solidi (A) Applications and Materials Science 213 1922 - 1925 1862-6300 2016/07
• Synthesis of nanoparticles composed of silver and silver chloride for a plasmonic photocatalyst using an extract from a weed Solidago altissima (goldenrod)

  Vemu Anil Kumar; Takashi Uchida; Toru Mizuki; Yoshikata Nakajima; Yoshihiro Katsube; Tatsuro Hanajiri; Toru Maekawa

  Advances in Natural Sciences: Nanoscience and Nanotechnology Institute of Physics Publishing 7 (1) 2043-6262 2016/03 [Refereed]
  
• Investigating the chemical mist deposition technique for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) on textured crystalline-silicon for organic/crystalline-silicon heterojunction solar cells

  Jaker Hossain; Tatsuya Ohki; Koki Ichikawa; Kazuhiko Fujiyama; Keiji Ueno; Yasuhiko Fujii; Tatsuro Hanajiri; Hajime Shirai

  JAPANESE JOURNAL OF APPLIED PHYSICS 55 (3) 0021-4922 2016/03 [Refereed]
  
• Synthesis of nanoparticles composed of silver and silver chloride for a plasmonic photocatalyst using an extract from a weed Solidago altissima (goldenrod)

  Vemu Anil Kumar; Takashi Uchida; Toru Mizuki; Yoshikata Nakajima; Yoshihiro Katsube; Tatsuro Hanajiri; Toru Maekawa

  ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY 7 (1) .015002 - 015013 2043-6254 2016/03 [Refereed]
  
• Nanomaterial-assisted PCR based on thermal generation from magnetic nanoparticles under high-frequency AC magnetic fields

  Toshiaki Higashi; Hiroaki Minegishi; Akinobu Echigo; Yutaka Nagaoka; Takahiro Fukuda; Ron Usami; Toru Maekawa; Tatsuro Hanajiri

  CHEMICAL PHYSICS LETTERS 635 234 - 240 0009-2614 2015/08 [Refereed]
  
• N-2-Plasma-Assisted One-Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir-Blodgett Technique

  Neha Chauhan; Vivekanandan Palaninathan; Sreejith Raveendran; Aby Cheruvathoor Poulose; Yoshikata Nakajima; Takashi Hasumura; Takashi Uchida; Tatsuro Hanajiri; Toru Maekawa; D. Sakthi Kumar

  ADVANCED MATERIALS INTERFACES 2 (5) 2196-7350 2015/03 [Refereed]
  
• Mist transport and sticking process of PEDOT:PSS on textured c-Si using CMD Ⅱ

  Ohki Tatsuya; Sugawara Hiromitsu; Ichikawa Koki; Ku Pei-ju; Fujiyama Kazuhiko; Hanajiri Tatsuro; Ishikawa Ryo; Ueno Keiji; Sun Kienwen; Shirai Hajime

  JSAP Annual Meetings Extended Abstracts The Japan Society of Applied Physics 2014.2 3474 - 3474 2014/09
• Modeling of Drain Electric Flux Passing Through the BOX Layer in SoI MOSFETs-Part II: Model Derivation and Validity Confirmation

  Tatsuya Yamada; Tatsuro Hanajiri; Toru Toyabe

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (9) 3030 - 3035 0018-9383 2014/09 [Refereed]
  
• Modeling of Drain Electric Flux Passing Through the BOX Layer in SoI MOSFETs-Part I: Preparation for Modeling Based on Conformal Mapping

  Tatsuya Yamada; Tatsuro Hanajiri; Toru Toyabe

  IEEE TRANSACTIONS ON ELECTRON DEVICES 61 (9) 3023 - 3029 0018-9383 2014/09 [Refereed]
  
• Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism

  Tatsuya Yamada; Yoshikata Nakajima; Tatsuro Hanajiri; Toru Toyabe; Takuo Sugano

  JOURNAL OF COMPUTATIONAL ELECTRONICS 13 (2) 400 - 407 1569-8025 2014/06 [Refereed]
  
• Synthesis of an Ultradense Forest of Vertically Aligned Triple-Walled Carbon Nanotubes of Uniform Diameter and Length Using Hollow Catalytic Nanoparticles

  Ankur Baliyan; Yoshikata Nakajima; Takahiro Fukuda; Takashi Uchida; Tatsuro Hanajiri; Toru Maekawa

  JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 136 (3) 1047 - 1053 0002-7863 2014/01 [Refereed]
  
• Quantitative Extraction of Electric Flux in the Buried-Oxide Layer and Investigation of Its Effects on MOSFET Characteristics

  Tatsuya Yamada; Shumpei Abe; Yoshikata Nakajima; Tatsuro Hanajiri; Toru Toyabe; Takuo Sugano

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 (12) 3996 - 4001 0018-9383 2013/12 [Refereed]
  
• Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications (vol 60, pg 260, 2013)

  Tatsuya Yamada; Yoshikata Nakajima; Tatsuro Hanajiri; Takuo Sugano

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 (12) 4281 - 4283 0018-9383 2013/12 [Refereed]
  
• Ecofriendly route for the synthesis of highly conductive graphene using extremophiles for green electronics and bioscience

  Sreejith Raveendran; Neha Chauhan; Yoshikata Nakajima; Higashi Toshiaki; Shunji Kurosu; Yuji Tanizawa; Ryugo Tero; Yasuhiko Yoshida; Tatsuro Hanajiri; Toru Maekawa; Pulickel. M. Ajayan; Adarsh Sandhu; D. Sakthi Kumar

  Particle and Particle Systems Characterization 30 (7) 573 - 578 0934-0866 2013/07 [Refereed]
  
• CoFe2O4 nanoparticles as a catalyst: synthesis of a forest of vertically aligned CNTs of uniform diameters by plasma-enhanced CVD

  Ankur Baliyan; Takahiro Fukuda; Yasuhiro Hayasaki; Takashi Uchida; Yoshikata Nakajima; Tatsuro Hanajiri; Toru Maekawa

  JOURNAL OF NANOPARTICLE RESEARCH 15 (6) 記事番号: UNSP 1693  1388-0764 2013/06 [Refereed]
  
• Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications

  Tatsuya Yamada; Yoshikata Nakajima; Tatsuro Hanajiri; Takuo Sugano

  IEEE TRANSACTIONS ON ELECTRON DEVICES 60 (1) 260 - 267 0018-9383 2013/01 [Refereed]
  
• Precise Control of the Number of Walls of Carbon Nanotubes of a Uniform Internal Diameter

  Ankur Baliyan; Yasuhiro Hayasaki; Takahiro Fukuda; Takashi Uchida; Yoshikata Nakajima; Tatsuro Hanajiri; Toru Maekawa

  JOURNAL OF PHYSICAL CHEMISTRY C 117 (1) 683 - 686 1932-7447 2013/01 [Refereed]
  
• Effects of Superparamagnetic Nanoparticle Clusters on the Polymerase Chain Reaction

  Toshiaki Higashi; Hiroaki Minegishi; Yutaka Nagaoka; Takahiro Fukuda; Akinobu Echigo; Ron Usami; Toru Maekawa; Tatsuro Hanajiri

  APPLIED SCIENCES-BASEL 2 (2) 303 - 314 2076-3417 2012/06 [Refereed]
  
• Intracellular trafficking of superparamagnetic iron oxide nanoparticles conjugated with TAT peptide: 3-dimensional electron tomography analysis

  Baiju G. Nair; Takahiro Fukuda; Toru Mizuki; Tatsuro Hanajiri; Toru Maekawa

  BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS 421 (4) 763 - 767 0006-291X 2012/05 [Refereed]
  
• Rapid thermal annealing of sputter-deposited ZnO/ZnO:N/ZnO multilayered structures

  Fumiya Watanabe; Hajime Shirai; Yasuhiko Fujii; Tatsuro Hanajiri

  THIN SOLID FILMS 520 (10) 3729 - 3735 0040-6090 2012/03 [Refereed]
  
• Synthesis of diameter controlled carbon nanotubes using self-assembled catalyst nanoparticles

  Ankur Baliyan; Takahiro Fukuda; Takashi Uchida; Yoshikata Nakajima; Tatsuro Hanajiri; Toru Maekawa

  CHEMICAL PHYSICS LETTERS 519-20 78 - 82 0009-2614 2012/01 [Refereed]
  
• Synthesis of a forest of double/triple walled CNTs of uniform diameters by plasma enhanced CVD using monodisperse iron oxide nanoparticles

  Ankur Baliyan; Takashi Uchida; Takahiro Fukuda; Yoshikata Nakajima; Tatsuro Hanajiri; Toru Maekawa

  JOURNAL OF MATERIALS CHEMISTRY 22 (12) 5277 - 5280 0959-9428 2012 [Refereed]
  
• Effect of superparamagnetic nanoparticles on the polymerase chain reaction

  宇佐美; 論 T. Higashi; H. Minegishi; Y. Nagaoka; T. Fukuda; A. Echigo T; Maekawa; T. Hanajiri

  Applied Science 303 - 314 2012/01
• Regulation of PCR efficiency with magnetic nanoparticles in a rotating magnetic field

  Toshiaki Higashi; Yutaka Nagaoka; Hiroaki Minegishi; Akinobu Echigo; Ron Usami; Toru Maekawa; Tatsuro Hanajiri

  CHEMICAL PHYSICS LETTERS 506 (4-6) 239 - 242 0009-2614 2011/04 [Refereed]
  
• Local-Stress-Induced Trap States in SOI Layers With Different Levels of Roughness at SOI/BOX Interfaces

  Yoshikata Nakajima; Yukitoshi Watanabe; Tatsuro Hanajiri; Toru Toyabe; Takuo Sugano

  IEEE ELECTRON DEVICE LETTERS 32 (3) 237 - 239 0741-3106 2011/03 [Refereed]
  
• Proposal and experimental validation of the electrophoretic Coulter method for analyzing microparticles and biological cells

  Naohiro Takahashi; Atsushi Aki; Tomofumi Ukai; Yoshikata Nakajima; Toru Maekawa; Tatsuro Hanajiri

  SENSORS AND ACTUATORS B-CHEMICAL 151 (2) 410 - 415 0925-4005 2011/01 [Refereed]
  
• Effects of poly-L-tyrosine molecules decoration on the surface properties and electron transport of SWCNTs compared to the effects of DNA molecules

  Toshiaki Higashi; Yoshikata Nakajima; Mio Kojima; Koji Ishii; Akira Inoue; Toru Maekawa; Tatsuro Hanajiri

  CHEMICAL PHYSICS LETTERS 501 (4-6) 451 - 454 0009-2614 2011/01 [Refereed]
  
• Dispersion of single-walled carbon nanotubes modified with poly-l-tyrosine in water

  Mio Kojima; Tomoka Chiba; Junichiro Niishima; Toshiaki Higashi; Takahiro Fukuda; Yoshikata Nakajima; Shunji Kurosu; Tatsuro Hanajiri; Koji Ishii; Toru Maekawa; Akira Inoue

  NANOSCALE RESEARCH LETTERS 6 記事番号: 128  1556-276X 2011 [Refereed]
  
• In-depth profiling of electron trap states in silicon-on-insulator layers and local mechanical stress near the silicon-on-insulator/buried oxide interface in separation-by-implanted-oxygen wafers

  Yoshikata Nakajima; Takahiro Toda; Tatsuro Hanajiri; Toru Toyabe; Takuo Sugano

  JOURNAL OF APPLIED PHYSICS 108 (12) 記事番号: 124505  0021-8979 2010/12 [Refereed]
  
• Sensors Based On Carbon Nanotubes and Their Applications: A Review

  Saino Hanna Varghese; Remya Nair; Baiju G. Nair; T. Hanajiri; T. Maekawa; Y. Yoshida; D. Sakthi Kumar

  CURRENT NANOSCIENCE 6 (4) 331 - 346 1573-4137 2010/08 [Refereed]
  
• Blood Compatibility of Surface Modified Poly(ethylene terephthalate) (PET) by Plasma Polymerized Acetobromo-alpha-D-glucose

  D. Sakthi Kumar; Baiju G. Nair; Saino H. Varghese; Remya Nair; T. Hanajiri; T. Maekawa; Yasuhiko Yoshida

  JOURNAL OF BIOMATERIALS APPLICATIONS 24 (6) 527 - 544 0885-3282 2010/02 [Refereed]
  
• Suppression of DIBL in deca-nano SOI MOSFETs by controlling permittivity and thickness of BOX layers

  Abe S; Miyazawa Y; Nakajima Y; Hanajiri T; Toyabe T; Sugano T

  Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 329 - 332 2009 [Refereed]
  
• Proposal of heavily doped silicon between insulators MOSFETs and confirmation of their advantages by device simulation

  Yamada T; Miyazawa Y; Nakajima Y; Hanajiri T; Toyabe T; Sugano T

  2009 International Semiconductor Device Research Symposium, ISDRS '09 2009 [Refereed]
  
• Improvement of performance of Drain-Source-On-Insulator MOSFETs by using heavily doped-Si region between local BOX regions

  Yamada T; Miyazawa Y; Nakajima Y; Hanajiri T; Toyabe T; Sugano T

  Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 341 - 344 2009 [Refereed]
  
• Electrophoretic mobility and resultant zeta potential of an individual cell analyzed by electrophoretic Coulter method

  Takahashi N; Aki A; Ukai T; Nakajima Y; Maekawa T; Hanajiri T

  2009 International Semiconductor Device Research Symposium, ISDRS '09 2009 [Refereed]
  
• Discussion of origins of high-density trap states in SIMOX wafers

  Nakajima Y; Toda T; Hanajiri T; Toyabe T; Sugano T

  Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 185 - 188 2009 [Refereed]
  
• Correlation between high-density trap states and local stress near SOI/BOX interface in SIMOX wafers

  Nakajima Y; Watanabe Y; Hanajiri T; Toyabe T; Sugano T

  2009 International Semiconductor Device Research Symposium, ISDRS '09 2009 [Refereed]
  
• Capture of nonmagnetic particles and living cells using a microelectromagnetic system

  Atsushi Aki; Osamu Ito; Hisao Morimoto; Yutaka Nagaoka; Yoshikata Nakajima; Toru Mizuki; Tatsuro Hanajiri; Ron Usami; Toru Maekawa

  JOURNAL OF APPLIED PHYSICS 104 (9) 記事番号: 094509  0021-8979 2008/11 [Refereed]
  
• Drive current enhancement in silicon-on-quartz MOSFETs

  Yoshikata Nakajima; Kenji Sasaki; Tatsuro Hanajiri; Toru Toyabe; Takuo Sugano

  IEEE ELECTRON DEVICE LETTERS 29 (8) 944 - 945 0741-3106 2008/08 [Refereed]
  
• Three dimensional image construction and spectrum extraction from two dimensional elemental mapping in Auger electron spectroscopy

  N. Urushihara; S. Iida; N. Sanada; M. Suzuki; D. F. Paul; S. Bryan; Y. Nakajima; T. Hanajiri; K. Kakushima; P. Ahmet; K. Tsutsui; H. Iwai

  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 26 (4) 668 - 672 0734-2101 2008/07 [Refereed]
  
• Characterization of distribution of trap states in silicon-on-insulator layers by front-gate characteristics in n-channel SOI MOSFETs

  Kenji Kajiwara; Yoshikata Nakajima; Tatsuro Hanajiri; Toru Toyabe; Takuo Sugano

  IEEE TRANSACTIONS ON ELECTRON DEVICES 55 (7) 1702 - 1707 0018-9383 2008/07 [Refereed]
  
• Detection of surface immunoreactions on individual cells by electrophoretic mobility measurement in a micro-channel

  Atsushi Aki; Yusuke Nihei; Hiroto Asai; Tomofumi Ukai; Hisao Morimoto; Yoshikata Nakajima; Tatsuro Hanajiri; Toru Maekawa

  SENSORS AND ACTUATORS B-CHEMICAL 131 (1) 285 - 289 0925-4005 2008/04 [Refereed]
  
• Ultraviolet irradiation effects on and depth profiles in X-ray photoelectron spectra of poly(vinylpyridine) thin films

  Satoko Nishiyama; Masahiro Tajima; Yoshikata Nakajima; Tatsuro Hanajiri; Yasuhiko Yoshida

  JAPANESE JOURNAL OF APPLIED PHYSICS 47 (1) 432 - 437 0021-4922 2008/01 [Refereed]
  
• Development of Electron Cyclotron Resonance Ion Source for Synthesis of Endohedral Metallofullerenes

  YOSHIDA Y; KATO Y; KITAGAWA A; HANAJIRI T; SHIMA K; ASAJI T; BIRI S; UCHIDA T; MURAMATSU M; TANAKA K

  AIP Conference Proceedings 1066 525 - 528 0094-243X 2008 [Refereed]
  
• Dissociation of carbon dioxide and creation of carbon particles and films at room temperature

  Takahiro Fukuda; Toru Maekawa; Takashi Hasumura; Nyrki Rantonen; Koji Ishii; Yoshikata Nakajima; Tatsuro Hanajiri; Yoshikazu Yoshida; Raymond Whitby; Sergey Mikhalovsky

  New Journal of Physics 9 (231) 1367-2630 2007/09 [Refereed]
  
• Proposal of Carbon nanotube Inductors

  TSUBAKI Kotaro; NAKAJIMA Yoshikata; HANAJIRI Tatsuro; YAMAGUCHI Hiroshi

  J. Physics 38 49 - 52 2006/01 [Refereed]
  
• A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs (vol 6, pg 462, 2004)

  Y Nakajima; H Tomita; K Aoto; K Sasaki; T Hanajiri; T Toyabe; T Morikawa; T Sugano

  THIN SOLID FILMS 488 (1-2) 337 - 339 0040-6090 2005/09 [Refereed]
  
• Large magnetic field induced by carbon nanotube current - Proposal of carbon nanotube inductors

  Tsubaki K; Shioya H; Ono J; Nakajima Y; Hanajiri T; Yamaguchi H

  Device Research Conference - Conference Digest, DRC 2005 119 - 120 2005 [Refereed]
  
• Erratum: A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs (Thin Solid Films (2004) 462 (6-10))

  Nakajima Y; Tomita H; Aoto K; Sasaki K; Hanajiri T; Toyabe T; Morikawa T; Sugano T

  Thin Solid Films 488 (1-2) 337 - 339 2005 [Refereed]
  
• Electron Transport in U-shape Carbon

  TSUBAKI Kotaro; TOYABE Toru; HANAJIRI Tatsuro; GAMO N. Mika

  Industrial Technology 28 30 - 34 2005/01 [Refereed]
  
• Scaling rules for SOI MOSFETs operating in the fully inverted mode

  T Hanajiri; M Niizato; K Aoto; T Toyabe; Y Nakajima; T Morikawa; T Sugano

  SOLID-STATE ELECTRONICS 48 (10-11) 1943 - 1946 0038-1101 2004/10 [Refereed]
  
• A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs

  Y Nakajima; H Tomita; K Aoto; K Sasaki; T Hanajiri; T Toyabe; T Morikawa; T Sugano

  THIN SOLID FILMS 462 6 - 10 0040-6090 2004/09 [Refereed]
  
• An approach for quantum mechanical modeling and simulation for MOS devices, covering the whole operation region

  T Hanajiri; K Aoto; T Hoshino; M Niizato; Y Nakajima; T Toyabe; T Morikawa; T Sugano; Y Akagi

  COMPUTATIONAL MATERIALS SCIENCE 30 (3-4) 235 - 241 0927-0256 2004/08 [Refereed]
  
• Confirmation of electric properties of traps at silicon-on-insulator (SOI)/buried oxide (BOX) interface by three-dimensional device simulation

  Y Nakajima; K Sasaki; T Hanajiri; T Toyabe; T Morikawa; T Sugano

  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 24 (1-2) 92 - 95 1386-9477 2004/08 [Refereed]
  
• Characterization of trap states at silicon-on-insulator (SOI)/buried oxide (BOX) interface by back gate transconductance characteristics in SOI MOSFETs

  Y Nakajima; H Tomita; K Aoto; N Ito; T Hanajiri; T Toyabe; T Morikawa; T Sugano

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 (4B) 2004 - 2008 0021-4922 2003/04 [Refereed]
  
• Suppression of DIBL of deep sub-micron FD SOI MOSFETs by source/drain engineering

  Nakajima Y; Hanajiri T; Toyabe T; Morikawa T; Sugano T

  2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings 242 - 243 2003 [Refereed]
  
• Breakdown of a simple scaling rule of SOI MOSFETs and its prolong by thinning BOX

  Hanajiri T; Niizato M; Aoto K; Toyabe T; Nakajima Y; Morikawa T; Sugano T

  2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings 260 - 261 2003 [Refereed]
  
• Suppression of short channel effects by full inversion in deep sub-micron gate SOI MOSFETs

  T Hanajiri; T Toyabe; T Sugano

  SOLID-STATE ELECTRONICS 45 (12) 2077 - 2081 0038-1101 2001/12 [Refereed]
  
• Self-formation of ultra small structures on vicinal Si substrates for nano-device array

  T Hanajiri; T Sugano

  JOURNAL OF CRYSTAL GROWTH 210 (1-3) 85 - 89 0022-0248 2000/03 [Refereed]
  
• Advantages of the asymmetric tunnel barrier for high-density integration of single electron devices

  Matsumoto, Y; Hanajiri, T; Toyabe, T; Sugano, T

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 36 (6B) 4143 - 4146 1997/01 [Refereed]
  
• Single electron device with asymmetric tunnel barriers

  Y Matsumoto; T Hanajiri; T Toyabe; T Sugano

  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 35 (2B) 1126 - 1131 0021-4922 1996/02 [Refereed]
  
• Trap states and their effect on the bias-voltage dependence of PL intensity in InP MIS diodes

  T Hanajiri; T Katoda; Y Matsumoto; T Sugano

  1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS 625 - 627 1996 [Refereed]
  
• Electrical and optical properties of phosphorous nitride films formed on InP substrates with photon-assisted chemical vapour deposition

  Y. Matsumoto; T. Hanajiri; T. Sugano; Le T T Tuyen; T. Katoda

  Thin Solid Films 269 (1-2) 41 - 46 0040-6090 1995/11 [Refereed]
  
• Improvement of resistivity of phosphorous nitride films deposited at 100 degrees C on InP substrate

  Y MATSUMOTO; T SUZUKI; K HAGA; H SASAKI; M SAKUMA; T HANAJIRI; T SUGANO

  SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS 609 - 611 1995 [Refereed]
  
• Characterization of surface recombination velocity of InP reduced by sulfur treatment and a phosphorous nitride film formation with Raman spectroscopy

  T HANAJIRI; Y MATSUMOTO; T SUGANO; T KATODA

  SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS 585 - 588 1995 [Refereed]
  

Works

• 高度通信用高周波デバイスの開発

  花尻 達郎 Others 2000 -2008
• 超低消費電力電子デバイスの為のシミュレーター開発

  花尻 達郎 Others 1998 -2000

MISC

• 電気泳動コールター法における精度向上

  清水俊彰; 水木徹; 鵜飼智文; 東利晃; 中島義賢; 花尻達郎  応用物理学会春季学術講演会講演予稿集(CD-ROM)  62nd-  ROMBUNNO.14A-D6-5  2015/02
• SOQ MOSFET特性の照射光波長依存性

  西澤悠佑; 山田辰哉; 東利晃; 中島義賢; 花尻達郎  応用物理学会春季学術講演会講演予稿集(CD-ROM)  62nd-  ROMBUNNO.11P-A25-14  2015/02
• 電気泳動コールター法における電気浸透流の抑制

  清水俊彰; 吉原祐介; 安喜敦士; 鵜飼智文; 中島義賢; 花尻達郎  化学とマイクロ・ナノシステム学会研究会講演要旨集  28th-  59  2013/12
• 電気泳動コールター法を用いた生体細胞のゼータ電位の評価

  尾形和平; 高橋直寛; 中島義賢; 花尻達郎  応用物理学関係連合講演会講演予稿集(CD-ROM)  59th-  ROMBUNNO.16P-F8-13  2012/02
• SOQ基板の光・電子融合デバイスへの応用の検討

  宮澤元; 中島義賢; 花尻達郎  応用物理学関係連合講演会講演予稿集(CD-ROM)  59th-  ROMBUNNO.17P-A1-13  2012/02
• 極薄膜SOQ pinダイオードの発光特性

  谷村貴行; 中島義賢; 花尻達郎  応用物理学関係連合講演会講演予稿集(CD-ROM)  57th-  ROMBUNNO.20A-TE-3  2010/03
• コールター法を用いたマイクロチャネル電気泳動法の提案および実験的検証

  高橋直寛; 安喜敦士; 鵜飼智文; 中島義賢; 前川透; 花尻達郎  応用物理学会学術講演会講演予稿集  70th-  (3)  1195  2009/09
• 離散的イオンランダム分布におけるSOI‐MOSFETデバイスシミュレーション

  志川智也; 中島義賢; 花尻達郎; 鳥谷部達  応用物理学会学術講演会講演予稿集  70th-  (2)  807  2009/09
• SIMOX基板特有の高密度トラップとSOI/BOX界面凹凸との相関

  渡邉幸俊; 中島義賢; 鳥谷部達; 花尻達郎; 菅野卓雄  応用物理学会学術講演会講演予稿集  70th-  (2)  774  2009/09
• ゲート酸化膜のトラップがSOI MOSFETトンネル電流に与える影響の評価

  戸田貴大; 中島義賢; 花尻達郎; 鳥谷部達; 菅野卓雄  応用物理学関係連合講演会講演予稿集  56th-  (2)  872  2009/03
• ケルビンフォース顕微鏡を用いた電気的非標識免疫測定

  山下滋; 沼田慎吉; 安喜敦士; 東海林崇; 中島義賢; 前川透; 花尻達郎  応用物理学関係連合講演会講演予稿集  56th-  (3)  1396  2009/03
• ECRイオン源中でのフラーレンプラズマの生成と制御

  内田貴司; 田中清勝; 峰崎英和; 村松正幸; BIRI Sandor; 浅地豊久; 嶋一史; 花尻達郎; 北川敦志; 加藤裕史; 吉田善一  応用物理学会学術講演会講演予稿集  69th-  (2)  622  2008/09
• 局所BOX間高不純物ドーピングによるDSOI MOSFETの特性改善

  山田辰哉; 宮澤吉康; 中島義賢; 花尻達郎; 鳥谷部達; 菅野卓雄  応用物理学会学術講演会講演予稿集  69th-  (2)  778  2008/09
• BOX比誘電率およびBOX膜厚制御によるDIBLの抑制効果

  阿部俊平; 宮澤吉康; 中島義賢; 花尻達郎; 鳥谷部達; 菅野卓雄  応用物理学会学術講演会講演予稿集  69th-  (2)  778  2008/09
• 金属内包フラーレン合成用電子サイクロトロン共鳴イオン源の開発(II)

  田中清勝; 内田貴司; 峰崎英和; 村松正幸; BIRI Sandor; 浅地豊久; 嶋一史; 花尻達郎; 北川敦志; 加藤裕史; 吉田善一  応用物理学会学術講演会講演予稿集  69th-  (2)  621  2008/09
• 選択的BOXを有するSOI MOSFETの有用性

  前川貴信; 山田辰哉; 宮澤吉康; 中島義賢; 花尻達郎; 鳥谷部達; 菅野卓雄  応用物理学関係連合講演会講演予稿集  55th-  (2)  920  2008/03
• 金属内包フラーレン合成用電子サイクロトロン共鳴イオン源の開発

  田中清勝; 村松正幸; BIRI Sandor; 浅地豊久; 嶋一史; 花尻達郎; 北川敦志; 加藤裕史; 吉田善一  応用物理学関係連合講演会講演予稿集  55th-  (2)  747  2008/03
• 工業技術研究所プロジェクト研究報告 U字形状カーボンナノチューブの電子輸送の研究

  椿 光太郎; 鳥谷部 達; 花尻 達郎  工業技術  (28)  30  -34  2006
• 20pYC-6 Structure analysis and electrical resistivity measurements of core-shell-type (InSb/In_2O_3) nanowires

  Horiuchi T.; Ishizuka M.; Nakajima Y.; Hanajiri T.; Wada N.  Meeting abstracts of the Physical Society of Japan  60-  (2)  538  -538  2005/08
• Experimental demonstration of advantages of MOSFETs on Silicon On Quartz wafers

  K. Sasaki; Y. Miyazawa; K. Kajiwara; T. Yamazaki; Y. Nakajima; T. Hanajiri; T. Toyabe; T. Sugano  Thin Film Materials and Devices Meeting (TFMD) 2004  91  2004/11  [Refereed]
  
• 28pPSB-12 Fabrication of InSb Quantum Wires and their Electrical Conductivity

  Yamamoto T.; Wada N.; Nakajima Y.; Hanajiri T.  Meeting abstracts of the Physical Society of Japan  59-  (1)  693  -693  2004/03
• Quantum mechanical modeling and simulation using drift-diffusion

  Hanajiri T; Niizato M; Toyabe T; Sugano T; Saito A; Akagi Y  Technical report of IEICE. VLD  100-  (294)  45  -50  2000/09
• Process of Formation of Nitrided Oxides for Asymmetric Tunnel Barriers in Electron Tunneling Devices

  T.Hanajiri; T. Takahashi; T.SUGANO  Proc.of Int.Symp.on Formation, Physics and Device Application of Quantum Dot Structures  144  2000/09  [Refereed]
  
• Fabrication of ultra small structures on Si utilizing self-organization

  T.Hanajiri; T.SUGANO  The 8th International Conference on Defects-Recognition,Imaging and Physics in Semiconductors  72  1999/08  [Refereed]
  
• 単電子デバイスにみるナノエレクトロニクス技術

  花尻 達郎  精密工学会春季大会. シンポジウム資料  1999-  39  -42  1999/03
• 単電子素子の設計および試作

  花尻達郎; 菅野卓雄  東洋大学工業技術研究所報告  20-  31  -35  1998/12
• Performances of Single Electron Devices with Asymmetric Tunnel Barriers

  T.Hanajiri; T.Toyabe; T.Sugano  Proc.of 3rd.Int.Workshop on Quantum Functional Devices  65  -66  1997/12  [Refereed][Invited]
  
• ナノエレクトロニクスの展望

  花尻達郎; 松本善哉; 菅野卓雄  東洋大学工学部研究報告  31-  37  -53  1996/12
• Advantages of the Asymmetric Tunnel Barrier for High Density Integration of Single Electron Devices

  Y.Matsumoto; T.Hanajiri; T.Toyabe; T.Sugano  Proc.of Int.Symp.on Formation, Physics snd Device Application of Quantum Dot Structures  144  1996/11  [Refereed]
  
• Experimental observation of Coulomb staircase in asymmetric tunnel barrier system

  Y Matsumoto; T Hanajiri; T Toyabe; T Sugano  IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996  429  -432  1996
• Single electron device with asymmetric tunnel barriers

  Y.Matsumoto; T.Hanajiri; T.Toyabe; T.Sugano  Y.Matsumoto,T.Hanajiri,T.Toyabe andT.Sugano  186-  186  -188  1995/08  [Refereed]
  
• Single Electron Transistor with Asymmetric Tunnel Barriers

  New Technology Japan  23-  (3)  16  1995/06
• 電子の流れに方向性

  日刊工業新聞  1995/04
• CHARACTERIZATION OF DENSITY OF TRAP STATES AT THE BACK INTERFACE OF SIMOX WAFERS

  A TAKUBO; T HANAJIRI; T SUGANO; K KAJIYAMA  ICMTS 1995 - PROCEEDINGS OF THE 1995 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES  77  -80  1995  [Refereed]
  
• 化合物半導体MIS構造における界面特性の光学的評価法に関する研究

  花尻達郎; 河東田隆  固体エレクトロニクス・オプトエレクトロニクス研究発表会（東京大学）  21  -30  1994/03
• 光CVD法による窒化燐の堆積とInP MIS

  花尻達郎; 河東田隆  東京大学工学部総合試験所年報  51-  41  -44  1994/03

Industrial Property Rights

• 特許5392932:アモルファスカーボン薄膜作製方法    2013/10/25

  花尻 達郎
• 特許5257900:ゼータ電位測定装置及びゼータ電位測定方法    2013/05/02

  花尻 達郎
• 特許5213227:アモルファスカーボン薄膜作製方法    2013/03/08

  花尻 達郎
• 特開U. S. Patent Application Ser. No. 10/058, 221:Fully Inverted Type SOI-MOSFET Capable of Increasing the Effective Mutual Conductance  
• 特開平11-284201:完全反転型SOI MOSFET  
• 特開平8-264752:複合トンネル障壁構造をもつ電子デバイス単電子素子  
• 特開平8-97156:化合物半導体基板への絶縁膜の低温形成  

Research Grants & Projects

• 電気泳動コールター法(ECM)を医療用検査機器として実用化する為の新素材の活用

  文部科学省：科研費、基盤研究（C）

  Date (from‐to) : 2017/04 -2020/03 

  Author : 花尻 達郎
• ソフトリソグラフィーを駆使したシリコンナノ構造の自在配線

  文部科学省：科研費、基盤研究（C）

  Date (from‐to) : 2012/04 -2015/03 

  Author : 花尻 達郎
• セルソーターをトータルシステムとして本気でチップ化するには何が必要か?

  文部科学省：科研費、基盤研究（C）

  Date (from‐to) : 2009/04 -2012/03 

  Author : 花尻 達郎
• ＳＯＱ基板を何にどう使うか？

  文部科学省：科研費、基盤研究（C）

  Date (from‐to) : 2006/04 -2009/03 

  Author : 花尻 達郎
• 非対称トンネル障壁を用いた単電子素子回路の設計および試作

  文部科学省：科研費、奨励研究(A)

  Date (from‐to) : 1998/04 -2001/03 

  Author : 花尻 達郎
• 非対称トンネル障壁を有する単電子素子の設計及び試作

  （財）倉田奨励金財団：倉田奨励金

  Date (from‐to) : 1999/04 -2000/03 

  Author : 花尻 達郎
• ナノ電子デバイスの研究」

  （財）材料科学技術振興財団：大型研究助成

  Date (from‐to) : 1997/04 -1998/03 

  Author : 花尻 達郎
• 自己整合工程を用いたシリコン集積化単電子素子回路の設計および試作

  文部科学省：科研費、奨励研究(A)

  Date (from‐to) : 1996/04 -1997/03 

  Author : 花尻 達郎

Other link

researchmap

https://researchmap.jp/hanajiri