Tatsuro Hanajiri

Researcher Profile and Settings

Education

•   1991 04  - 1994 03 , The University of Tokyo
•   1989 04  - 1991 03 , The University of Tokyo
•   1985 04  - 1989 03 , Waseda University, School of Science and Engineering

Academic & Professional Experience

•   2012 04  - 現在, Toyo University
•   2011 04  - 現在, Toyo University, Faculty of Science and Engineering
•   2007 04  - 現在, Toyo University
•   2007 04  - 2011 03 , Toyo University
•   1998 04  - 2007 03 , Toyo University
•   1994 04  - 1998 03 , Toyo University

Research Activities

Research Areas

• Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electric/electronic material engineering, Semiconductor, Advanced carbon materials
• Manufacturing technology (mechanical, electrical/electronic, chemical engineering), Electronic devices and equipment, MOSFET, Single electron transisitor (SET)

Research Interests

Nano Electronics, Semiconductor, Single Electron Transisitor (SET), Silicon On Quartz (SOQ) wafer, Silicon On Insulator (SOI) wafer, MOSFET

Published Papers

• Detection and Analysis of Targeted Biological Cells by Electrophoretic Coulter Method, Yoshikata Nakajima, Tomofumi Ukai, Toshiaki Shimizu, Kazuhei Ogata, Seiki Iwai, Naohiro Takahashi, Atsushi Aki, Toru Mizuki, Toni Maekawa, Tatsuro Hanajiri, ANALYTICAL CHEMISTRY, ANALYTICAL CHEMISTRY, 89, (22) 12450 - 12457, 11 , Refereed, Invited
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• Barium hydroxide hole blocking layer for front- and back-organic/crystalline Si heterojunction solar cells, Jaker Hossain, Koji Kasahara, Daisuke Harada, A. T. M. Saiful Islam, Ryo Ishikawa, Keiji Ueno, Tatsuro Hanajiri, Yoshikata Nakajima, Yasuhiko Fujii, Masahide Tokuda, Hajime Shirai, JOURNAL OF APPLIED PHYSICS, JOURNAL OF APPLIED PHYSICS, 122, (5) , 08 , Refereed
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• Investigating the chemical mist deposition technique for poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) on textured crystalline-silicon for organic/crystalline-silicon heterojunction solar cells, Jaker Hossain, Tatsuya Ohki, Koki Ichikawa, Kazuhiko Fujiyama, Keiji Ueno, Yasuhiko Fujii, Tatsuro Hanajiri, Hajime Shirai, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 55, (3) , 03 , Refereed
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• Synthesis of nanoparticles composed of silver and silver chloride for a plasmonic photocatalyst using an extract from a weed Solidago altissima (goldenrod), Vemu Anil Kumar, Takashi Uchida, Toru Mizuki, Yoshikata Nakajima, Yoshihiro Katsube, Tatsuro Hanajiri, Toru Maekawa, ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY, ADVANCES IN NATURAL SCIENCES-NANOSCIENCE AND NANOTECHNOLOGY, 7, (1) .015002 - 015013, 03 , Refereed
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• Nanomaterial-assisted PCR based on thermal generation from magnetic nanoparticles under high-frequency AC magnetic fields, Toshiaki Higashi, Hiroaki Minegishi, Akinobu Echigo, Yutaka Nagaoka, Takahiro Fukuda, Ron Usami, Toru Maekawa, Tatsuro Hanajiri, CHEMICAL PHYSICS LETTERS, CHEMICAL PHYSICS LETTERS, 635, 234 - 240, 08 , Refereed
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• N-2-Plasma-Assisted One-Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir-Blodgett Technique, Neha Chauhan, Vivekanandan Palaninathan, Sreejith Raveendran, Aby Cheruvathoor Poulose, Yoshikata Nakajima, Takashi Hasumura, Takashi Uchida, Tatsuro Hanajiri, Toru Maekawa, D. Sakthi Kumar, ADVANCED MATERIALS INTERFACES, ADVANCED MATERIALS INTERFACES, 2, (5) , 03 , Refereed
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• Modeling of Drain Electric Flux Passing Through the BOX Layer in SoI MOSFETs-Part II: Model Derivation and Validity Confirmation, Tatsuya Yamada, Tatsuro Hanajiri, Toru Toyabe, IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE TRANSACTIONS ON ELECTRON DEVICES, 61, (9) 3030 - 3035, 09 , Refereed
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• Modeling of Drain Electric Flux Passing Through the BOX Layer in SoI MOSFETs-Part I: Preparation for Modeling Based on Conformal Mapping, Tatsuya Yamada, Tatsuro Hanajiri, Toru Toyabe, IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE TRANSACTIONS ON ELECTRON DEVICES, 61, (9) 3023 - 3029, 09 , Refereed
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• Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism, Tatsuya Yamada, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano, JOURNAL OF COMPUTATIONAL ELECTRONICS, JOURNAL OF COMPUTATIONAL ELECTRONICS, 13, (2) 400 - 407, 06 , Refereed
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• Synthesis of an Ultradense Forest of Vertically Aligned Triple-Walled Carbon Nanotubes of Uniform Diameter and Length Using Hollow Catalytic Nanoparticles, Ankur Baliyan, Yoshikata Nakajima, Takahiro Fukuda, Takashi Uchida, Tatsuro Hanajiri, Toru Maekawa, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 136, (3) 1047 - 1053, 01 , Refereed
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• Quantitative Extraction of Electric Flux in the Buried-Oxide Layer and Investigation of Its Effects on MOSFET Characteristics, Tatsuya Yamada, Shumpei Abe, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano, IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, (12) 3996 - 4001, 12 , Refereed
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• Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications (vol 60, pg 260, 2013), Tatsuya Yamada, Yoshikata Nakajima, Tatsuro Hanajiri, Takuo Sugano, IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, (12) 4281 - 4283, 12 , Refereed
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• Ecofriendly Route for the Synthesis of Highly Conductive Graphene Using Extremophiles for Green Electronics and Bioscience, Raveendran, Sreejith, Chauhan, Neha, Nakajima, Y, Higashi, T, Kurosu, S, Tanizawa, Y, Tero, R, Yoshida, Y, Hanajiri, T, Maekawa, T, PARTICLE & PARTICLE SYSTEMS CHARACTERIZATION, PARTICLE & PARTICLE SYSTEMS CHARACTERIZATION, 30, (7) 573 - 578, 06 , Refereed
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• CoFe2O4 nanoparticles as a catalyst: synthesis of a forest of vertically aligned CNTs of uniform diameters by plasma-enhanced CVD, Ankur Baliyan, Takahiro Fukuda, Yasuhiro Hayasaki, Takashi Uchida, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Maekawa, JOURNAL OF NANOPARTICLE RESEARCH, JOURNAL OF NANOPARTICLE RESEARCH, 15, (6) , 06 , Refereed
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• Suppression of Drain-Induced Barrier Lowering in Silicon-on-Insulator MOSFETs Through Source/Drain Engineering for Low-Operating-Power System-on-Chip Applications, Tatsuya Yamada, Yoshikata Nakajima, Tatsuro Hanajiri, Takuo Sugano, IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, (1) 260 - 267, 01 , Refereed
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• Precise Control of the Number of Walls of Carbon Nanotubes of a Uniform Internal Diameter, Ankur Baliyan, Yasuhiro Hayasaki, Takahiro Fukuda, Takashi Uchida, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Maekawa, JOURNAL OF PHYSICAL CHEMISTRY C, JOURNAL OF PHYSICAL CHEMISTRY C, 117, (1) 683 - 686, 01 , Refereed
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• Intracellular trafficking of superparamagnetic iron oxide nanoparticles conjugated with TAT peptide: 3-dimensional electron tomography analysis, Baiju G. Nair, Takahiro Fukuda, Toru Mizuki, Tatsuro Hanajiri, Toru Maekawa, BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS, BIOCHEMICAL AND BIOPHYSICAL RESEARCH COMMUNICATIONS, 421, (4) 763 - 767, 05 , Refereed
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• Rapid thermal annealing of sputter-deposited ZnO/ZnO:N/ZnO multilayered structures, Fumiya Watanabe, Hajime Shirai, Yasuhiko Fujii, Tatsuro Hanajiri, THIN SOLID FILMS, THIN SOLID FILMS, 520, (10) 3729 - 3735, 03 , Refereed
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• Synthesis of diameter controlled carbon nanotubes using self-assembled catalyst nanoparticles, Ankur Baliyan, Takahiro Fukuda, Takashi Uchida, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Maekawa, CHEMICAL PHYSICS LETTERS, CHEMICAL PHYSICS LETTERS, 519-20, 78 - 82, 01 , Refereed
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• Synthesis of a forest of double/triple walled CNTs of uniform diameters by plasma enhanced CVD using monodisperse iron oxide nanoparticles, Ankur Baliyan, Takashi Uchida, Takahiro Fukuda, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Maekawa, JOURNAL OF MATERIALS CHEMISTRY, JOURNAL OF MATERIALS CHEMISTRY, 22, (12) 5277 - 5280, Refereed
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• Regulation of PCR efficiency with magnetic nanoparticles in a rotating magnetic field, Toshiaki Higashi, Yutaka Nagaoka, Hiroaki Minegishi, Akinobu Echigo, Ron Usami, Toru Maekawa, Tatsuro Hanajiri, CHEMICAL PHYSICS LETTERS, CHEMICAL PHYSICS LETTERS, 506, (4-6) 239 - 242, 04 , Refereed
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• Local-Stress-Induced Trap States in SOI Layers With Different Levels of Roughness at SOI/BOX Interfaces, Yoshikata Nakajima, Yukitoshi Watanabe, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano, IEEE ELECTRON DEVICE LETTERS, IEEE ELECTRON DEVICE LETTERS, 32, (3) 237 - 239, 03 , Refereed
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• Proposal and experimental validation of the electrophoretic Coulter method for analyzing microparticles and biological cells, Naohiro Takahashi, Atsushi Aki, Tomofumi Ukai, Yoshikata Nakajima, Toru Maekawa, Tatsuro Hanajiri, SENSORS AND ACTUATORS B-CHEMICAL, SENSORS AND ACTUATORS B-CHEMICAL, 151, (2) 410 - 415, 01 , Refereed
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• Effects of poly-L-tyrosine molecules decoration on the surface properties and electron transport of SWCNTs compared to the effects of DNA molecules, Higashi, T, Nakajima, Y, Kojima, M, Ishii, K, Inoue, A, Maekawa, T, Hanajiri, T, CHEMICAL PHYSICS LETTERS, CHEMICAL PHYSICS LETTERS, 501, (4-6) 461 - 464, 01 , Refereed
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• Dispersion of single-walled carbon nanotubes modified with poly-l-tyrosine in water, Mio Kojima, Tomoka Chiba, Junichiro Niishima, Toshiaki Higashi, Takahiro Fukuda, Yoshikata Nakajima, Shunji Kurosu, Tatsuro Hanajiri, Koji Ishii, Toru Maekawa, Akira Inoue, NANOSCALE RESEARCH LETTERS, NANOSCALE RESEARCH LETTERS, 6, Refereed
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• In-depth profiling of electron trap states in silicon-on-insulator layers and local mechanical stress near the silicon-on-insulator/buried oxide interface in separation-by-implanted-oxygen wafers, Yoshikata Nakajima, Takahiro Toda, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano, JOURNAL OF APPLIED PHYSICS, JOURNAL OF APPLIED PHYSICS, 108, (12) , 12 , Refereed
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• Sensors Based On Carbon Nanotubes and Their Applications: A Review, Saino Hanna Varghese, Remya Nair, Baiju G. Nair, T. Hanajiri, T. Maekawa, Y. Yoshida, D. Sakthi Kumar, CURRENT NANOSCIENCE, CURRENT NANOSCIENCE, 6, (4) 331 - 346, 08 , Refereed
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• Blood Compatibility of Surface Modified Poly(ethylene terephthalate) (PET) by Plasma Polymerized Acetobromo-alpha-D-glucose, D. Sakthi Kumar, Baiju G. Nair, Saino H. Varghese, Remya Nair, T. Hanajiri, T. Maekawa, Yasuhiko Yoshida, JOURNAL OF BIOMATERIALS APPLICATIONS, JOURNAL OF BIOMATERIALS APPLICATIONS, 24, (6) 527 - 544, 02 , Refereed
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• Capture of nonmagnetic particles and living cells using a microelectromagnetic system, Atsushi Aki, Osamu Ito, Hisao Morimoto, Yutaka Nagaoka, Yoshikata Nakajima, Toru Mizuki, Tatsuro Hanajiri, Ron Usami, Toru Maekawa, JOURNAL OF APPLIED PHYSICS, JOURNAL OF APPLIED PHYSICS, 104, (9) , 11 , Refereed
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• Drive current enhancement in silicon-on-quartz MOSFETs, Yoshikata Nakajima, Kenji Sasaki, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano, IEEE ELECTRON DEVICE LETTERS, IEEE ELECTRON DEVICE LETTERS, 29, (8) 944 - 945, 08 , Refereed
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• Three dimensional image construction and spectrum extraction from two dimensional elemental mapping in Auger electron spectroscopy, N. Urushihara, S. Iida, N. Sanada, M. Suzuki, D. F. Paul, S. Bryan, Y. Nakajima, T. Hanajiri, K. Kakushima, P. Ahmet, K. Tsutsui, H. Iwai, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 26, (4) 668 - 672, 07 , Refereed
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• Characterization of distribution of trap states in silicon-on-insulator layers by front-gate characteristics in n-channel SOI MOSFETs, Kenji Kajiwara, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Toyabe, Takuo Sugano, IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE TRANSACTIONS ON ELECTRON DEVICES, 55, (7) 1702 - 1707, 07 , Refereed
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• Detection of surface immunoreactions on individual cells by electrophoretic mobility measurement in a micro-channel, Atsushi Aki, Yusuke Nihei, Hiroto Asai, Tomofumi Ukai, Hisao Morimoto, Yoshikata Nakajima, Tatsuro Hanajiri, Toru Maekawa, SENSORS AND ACTUATORS B-CHEMICAL, SENSORS AND ACTUATORS B-CHEMICAL, 131, (1) 285 - 289, 04 , Refereed
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• Ultraviolet irradiation effects on and depth profiles in X-ray photoelectron spectra of poly(vinylpyridine) thin films, Satoko Nishiyama, Masahiro Tajima, Yoshikata Nakajima, Tatsuro Hanajiri, Yasuhiko Yoshida, JAPANESE JOURNAL OF APPLIED PHYSICS, JAPANESE JOURNAL OF APPLIED PHYSICS, 47, (1) 432 - 437, 01 , Refereed
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• Dissociation of carbon dioxide and creation of carbon particles and films at room temperature, Fukuda, T, Maekawa, T, Hasumura, T, Rantonen, Nyrki, Ishii, K, Nakajima, Y, Hanajiri, T, Yoshida, Y, Whitby, Raymond L. D, Mikhalovsky, S, NEW JOURNAL OF PHYSICS, NEW JOURNAL OF PHYSICS, 9, (231) , 10 , Refereed
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• A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs (vol 6, pg 462, 2004), Y Nakajima, H Tomita, K Aoto, K Sasaki, T Hanajiri, T Toyabe, T Morikawa, T Sugano, THIN SOLID FILMS, THIN SOLID FILMS, 488, (1-2) 337 - 339, 09 , Refereed
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• Scaling rules for SOI MOSFETs operating in the fully inverted mode, T Hanajiri, M Niizato, K Aoto, T Toyabe, Y Nakajima, T Morikawa, T Sugano, SOLID-STATE ELECTRONICS, SOLID-STATE ELECTRONICS, 48, (10-11) 1943 - 1946, 10 , Refereed
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• A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs, Y Nakajima, H Tomita, K Aoto, K Sasaki, T Hanajiri, T Toyabe, T Morikawa, T Sugano, THIN SOLID FILMS, THIN SOLID FILMS, 462, 6 - 10, 09 , Refereed
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• An approach for quantum mechanical modeling and simulation for MOS devices, covering the whole operation region, T Hanajiri, K Aoto, T Hoshino, M Niizato, Y Nakajima, T Toyabe, T Morikawa, T Sugano, Y Akagi, COMPUTATIONAL MATERIALS SCIENCE, COMPUTATIONAL MATERIALS SCIENCE, 30, (3-4) 235 - 241, 08 , Refereed
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• Confirmation of electric properties of traps at silicon-on-insulator (SOI)/buried oxide (BOX) interface by three-dimensional device simulation, Y Nakajima, K Sasaki, T Hanajiri, T Toyabe, T Morikawa, T Sugano, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 24, (1-2) 92 - 95, 08 , Refereed
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• Characterization of trap states at silicon-on-insulator (SOI)/buried oxide (BOX) interface by back gate transconductance characteristics in SOI MOSFETs, Y Nakajima, H Tomita, K Aoto, N Ito, T Hanajiri, T Toyabe, T Morikawa, T Sugano, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42, (4B) 2004 - 2008, 04 , Refereed
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• Suppression of short channel effects by full inversion in deep sub-micron gate SOI MOSFETs, T Hanajiri, T Toyabe, T Sugano, SOLID-STATE ELECTRONICS, SOLID-STATE ELECTRONICS, 45, (12) 2077 - 2081, 12 , Refereed
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• Self-formation of ultra small structures on vicinal Si substrates for nano-device array, T Hanajiri, T Sugano, JOURNAL OF CRYSTAL GROWTH, JOURNAL OF CRYSTAL GROWTH, 210, (1-3) 85 - 89, 03 , Refereed
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• Advantages of the asymmetric tunnel barrier for high-density integration of single electron devices, Matsumoto, Y, Hanajiri, T, Toyabe, T, Sugano, T, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 36, (6B) 4143 - 4146, 01 , Refereed
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• Single electron device with asymmetric tunnel barriers, Y Matsumoto, T Hanajiri, T Toyabe, T Sugano, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 35, (2B) 1126 - 1131, 02 , Refereed
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• Electrical and optical properties of phosphorous nitride films formed on InP substrates with photon-assisted chemical vapour deposition, Matsumoto, Y, Hanajiri, T, Sugano, T, Tuyen, L.T.T, Katoda, T, Thin Solid Films, Thin Solid Films, 269, (1-2) 41 - 46, 11 , Refereed
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Misc

• Experimental demonstration of advantages of MOSFETs on Silicon On Quartz wafers, K. Sasaki, Y. Miyazawa, K. Kajiwara, T. Yamazaki, Y. Nakajima, T. Hanajiri, T. Toyabe, T. Sugano, Thin Film Materials and Devices Meeting (TFMD) 2004,   2004 11 , 査読有り
• Quantum mechanical modeling and simulation using drift-diffusion, Hanajiri T, Niizato M, Toyabe T, Sugano T, Saito A, Akagi Y, Technical report of IEICE. VLD, 100, (294) 45 - 50,   2000 09 15 , We propose a new approach for quantum mechanical(QM)modeling of MOS devices for extraction of device parameters. Our formulation is applicable continuously from the subthreshold to the saturation regions, since it exactly treats the QM effects on the in-depth distribution of the gate induced carriers in the channel by solving one dimensional Poisson equation and Schroedinger equation self-consistently and it treats the lateral drift-diffusion transport using quasi-Fermi potential. Our approach was verified by classical drift-difuusion two dimensional device simulator and it revealed the enhancement of threshold voltage in the saturation region due to the quantization of electrons in a SOI MOSFET with ultra thin top Si layer.
• Process of Formation of Nitrided Oxides for Asymmetric Tunnel Barriers in Electron Tunneling Devices, T.Hanajiri, T. Takahashi, T.SUGANO, Proc.of Int.Symp.on Formation, Physics and Device Application of Quantum Dot Structures,   2000 09 , 査読有り
• Fabrication of ultra small structures on Si utilizing self-organization, T.Hanajiri, T.SUGANO, The 8th International Conference on Defects-Recognition,Imaging and Physics in Semiconductors,   1999 08 , 査読有り
• Performances of Single Electron Devices with Asymmetric Tunnel Barriers, T.Hanajiri, T.Toyabe, T.Sugano, Proc.of 3rd.Int.Workshop on Quantum Functional Devices,   1997 12 , 査読有り, 招待有り
• Advantages of the Asymmetric Tunnel Barrier for High Density Integration of Single Electron Devices, Y.Matsumoto, T.Hanajiri, T.Toyabe, T.Sugano, Proc.of Int.Symp.on Formation, Physics snd Device Application of Quantum Dot Structures,   1996 11 , 査読有り

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• Experimental observation of Coulomb staircase in asymmetric tunnel barrier system, Y Matsumoto, T Hanajiri, T Toyabe, T Sugano, IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996,   1996 , The advantages of single electron device with asymmetrical tunnel barriers (ATBs), proposed by the authors((1)), over conventional single electron device with symmetrical tunnel barriers (STBs) are discussed referring the features of ATBs and the results of computer simulation of the performance of tunnel-junction-load SET logic and turnstile devices. Experimental observation of Coulomb staircase and asymmetrical tunnel characteristic in ATBs fabricated with GaAs/AlGaAs heterostructure is also reported.
• Single electron device with asymmetric tunnel barriers, Y.Matsumoto, T.Hanajiri, T.Toyabe, T.Sugano, Y.Matsumoto,T.Hanajiri,T.Toyabe andT.Sugano,   1995 08 , 査読有り
• Single Electron Transistor with Asymmetric Tunnel Barriers, New Technology Japan, 23,   1995 06
• Characterization of density trap states at the back, A.Takubo, T.Hanajiriri, T.Sugano, K.Kajiyama, Proc.of IEEE 1995 Int. Conf. on Microelctronic Test Structures,   1995 03 , 査読有り

Patents

• 特願2012-279333, 特開2013-082619, 特許5392932
• 特願2009-260937, 特開2011-106915, 特許5257900
• 特願2007-267780, 特開2009-096650, 特許5213227
• 特開U. S. Patent Application Ser. No. 10/058, 221
• 特開平11-284201
• 特開平8-264752
• 特開平8-97156